ISPSD6 2023 News
Mitsubishi Electric Develops SBD-Embedded SiC-MOSFET With New Structure For Power Modules
Mitsubishi Electric Corporation announces that it has developed a new structure for a silicon carbide metal-oxide-semiconductor field-effect transistor (SiC-MOSFET) embedded with a Schottky barrier diode (SBD), which the company has applied in a 3.3 kV full SiC power module, the FMF 800 DC -66 BEW2 for large industrial equipment such as railways and DC power systems. Samples began shipping on May 31. The chip's new structure is expected to help downsize railway traction systems, etc. as w...
